COPPERGLASSSi−SiSiSiSiSiPBSiSiSiSiSiPB+SiSiSiSiSi+−01
Rounded block: one atom (Si silicon, P phosphorus, B boron)Bond: a shared pair of electrons (two dots)Violet bead: a free electron (−) · magenta bead: a hole (+)Lit wire with moving dashes: current is flowingCopper conducts because about one electron per atom is free; glass insulates because every electron is held in a bond. Silicon sits in between. In the crystal each silicon atom shares its four valence electrons with four neighbours, so every bond holds a pair and nothing is free to move. Swap a few atoms for phosphorus (five valence electrons) and each spare electron breaks free: n-type. Swap them for boron (three) and each leaves a hole that hops like a positive charge: p-type. Violet beads are free electrons (they drift to the + contact); magenta beads are holes (they hop to the - contact). Dashes on a lit wire mean current is flowing. The drawing has 2 dopant atoms in 15 sites so you can see them. A typical real level, 1 × 10^16 per cm³, is 1 dopant per 5 million silicon atoms (0.2 ppm).

Conductors and insulators

  1. Electric current is moving charge. In copper, a conductor, about one electron per atom is free to roam, so current flows easily. In glass, an insulator, every electron is held tight, so almost nothing flows.

Silicon

Doping

In detail

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Resistivity (how strongly a material resists current), room temperature:
  copper   1.7 × 10^-8 Ω·m        conductor
  glass    10^9 to 10^13 Ω·m      insulator
  pure Si  3.2 × 10^3 Ω·m         in between
Copper: one free electron per atom (HyperPhysics).

The board is a teaching model: the battery, the switch and the bulb show the idea. Doped silicon conducts well enough to light a small bulb; pure silicon does not. The flat square grid is the usual simplified sketch. Real silicon is a 3D diamond lattice; every atom still bonds to four neighbours. The drawing has 2 dopant atoms in 15 sites so you can see them. A typical real level, 1 × 10^16 per cm³, is 1 dopant per 5 million silicon atoms (0.2 ppm). Silicon numbers at 300 K (Ioffe Institute): 5 × 10^22 atoms per cm³, 1 × 10^10 free electrons per cm³ in pure silicon, resistivity 3.2 × 10^5 Ω·cm, 0.045 eV to free the extra electron of phosphorus or fill the hole of boron.